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| Photointerrupter(Transmissive) KIT-1001A DESCRIPTION The photointerrupter high-performance standard type KIT-1001A combines a high-output GaAs IRED with a high sensitivity phototransistor. DIMENSIONS FEATURES * PWB direct mount type * GAP : 1.0mm * Ultra - compact APPLICATIONS * Cameras * Floppy disk drives * Encoders ABSOLUTE MAXIMUM RATINGS Parameter Forward Current Input Pulse Forward Current Reverse Voltage Power Dissipation Collector Emitter Voltage Output Emitter Collector Voltage Collector Current Collector Power Dissipation Operating Temperature Storage Temperature *2 *3 *2 *1 (Ta=25E) Symbol IF IFP VR PD VCEO VECO IC PC TOPR TSTG TSOL Rating 50 0.5 5 75 30 5 20 75 -20 ~ +85 -30 ~ +100 260 Unit mA A V mW V V mA mW E E E Soldering Temperature *1. Pulse width : twA100i ec.period : T=10msec s *2. No icebound or dew *3. For MAX. 5 seconds at the position of 1mm from the package ELECTRO-OPTICAL CHARACTERISTICS Parameter Forward Voltage Input Reverse Current Peak Wavelength Output Dark Current Light Current (Collect Current) Leakage Current Collector Emitter Saturation Voltage Response Time Rise Time Fall Time (Ta=25E) Symbol VF IR e P ICEO IL1 IL2 ICEOD VCE(SAT) tr tf IF=20mA VR=5V IF=20mA Conditions MIN. 0.5 0.2 - TYP. 1.2 940 1 0.5 0.15 10 10 MAX. 1.4 10 100 10 0.4 - Unit V i A nm nA mA mA VCE=10V, 0lx VCE=5V, IF=10mA (Non-shading) VCE=5V, IF= 5mA (Non-shading) VCE=5V, IF=10mA (shading) IF=10mA, IC=0.3mA VCE=5V, IC=1mA, RL=100U 1/2 Coupled i A V s s Power dissipation(P C Photointerrupter(Transmissive) (N ) Collector power dissipation Vs. Ambient temparature (I ) L L Relative light current(I ) Relative light current(I ) current(I Forward F ) Forward current( I F ) Forward current Vs. Forward voltage Ta=25E Light L Collector CEO current(I ) Current(I ) dark KIT-1001A (I ) Light current Vs. Forward current VCE=5V Ta=25E Power dissipartion( P C ) 100 50 0 20 40 60 80 0 (E) Ambient temperature(Ta) Ambient temperature(Ta) 100 L Response time tr, tf Light Current(I ) 4 3 2 50 1 0 0.51.01.52.0 0 10 20 30 40 0 (V) 0 (mA) F F Forward voltage(V ) Forward Current(I Forward voltage( VF) Light Current( I L ) Forward Current( IF ) (nA) (I ) (%) 5 2 10 4 100 1 10 3 2 50 0 10 1 -1 0 2 4 6 8 1012 0 -200 204060 (E) 0 (V) 0 (E) 10 20406080100 0 CE Collector-Emitter Voltage(V ) temperature(Ta) Ambient Ambient temperatu Dark current Vs. Ambient temperature Ta=25E VCE=5V IF=20I Light current Vs. Collentor-Emitter voltage Relative light current Vs. Ambient temperature Collector dark current( I CEO ) IF=40I IF=30I IF=20I IF=10I Collector-Emitter Voltage( VCE ) Relative light current( I L ) IF=50I VCE=10V Light Current( I L ) Ambient temperature( Ta ) Ambient temperature( Ta ) 2 10 1 10 tf Relative light current( I L ) VCE=5V IC=2I Ta=25E 100 50 VCE=5V IF=20I Ta=25E VCE=5V IF=20I Ta=25E tr Method of measuring position detection characteristic 0 -2 0 +2 -2 0 +2 2 3 4) (mm) 10 10 10(U Road Resistance(R )Moving distance(L)- L 0 Load Resistance( RL ) Moving distance( L ) 2/2 Optical Axis(Y) Optical Axis(X) Optical Axis(Y) (A ) 3 10 Switching time Vs. Load resistance (%) X Relative light current Vs. Moving distance Y Response time measu V CC Input ICR V L OUT Input Output 90% 10% td tf tr Method ofcharacteri detection measurin Optical Axis(X) Response time measurement circuit Response time tr, tf |
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